search:esd diode clamping voltage相關網頁資料

    • www.infineon.com
      Glossary of Essential Parameters R DYN is the dynamic resistance of the diode, which is calculated according to the procedure described in Infineon AN210. V BR is the break down voltage defined at I R = -1mA. V RWM is the maximum reverse working voltage o
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    • www.onsemi.com
      The ESD5B Series is designed to protect voltage sensitive components from ESD. Excellent clamping capability, low leakage, and fast response time provide bes ... Features Benefits Cap = 32 pf Preserves signal integrity for high speed data lines. Low ...
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日期:2026-04-21
This integrated transient voltage suppressor device (TVS) is designed for applications requiring transient overvoltage protection. It is intended for use in sensitive ......
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日期:2026-04-26
2009年11月26日 - You need to know the ESD device's clamping voltage and dynamic ... All other things being equal, a 5V ESD diode is only marginally better ......
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日期:2026-04-21
Clamping voltages and residual current levels that were acceptable for previous ... of the ESD circuit by the current in the strike (30 A for an. 8 kV ESD strike) and ......
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日期:2026-04-19
Similarly, the rail clamp or diode array structure in Figure. 3 is usually specified with the same four characteristics: ESD Level, Reverse Standoff Voltage/Leakage ......
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日期:2026-04-23
geometries, more circuit protection challenges are emerging. This article will ... Clamping voltage is the voltage that will be seen by the IC after the protection ......
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日期:2026-04-21
Semtech is a leader in providing low voltage (sub 5V) ESD protection. ... circuit protection devices have low leakage and reduced clamping voltage for use in portable ... SLVU2.8, Low-Voltage EPD TVS Diode for ESD and Latch-Up Protection....
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日期:2026-04-20
2011年6月15日 - The new PESD5V0X1Ux family is especially designed for ultra-low clamping voltages, ultra-low overshoot voltages, and ultra-low capacitance, ......