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日期:2025-05-10
2008年10月2日 - 談完LOD Effect,就不得不再談談WPE。在先進半導體製程中,除了LOD (Length of Diffusion) Effect外,另ㄧ個常被提到的問題就是Well Proximity ......
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日期:2025-05-07
Then the other one is that (so far it seems) AOE fields basically just become invisible (you can only see their circles) with Effect LOD, which ......
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日期:2025-05-05
應力造成分佈鄰近效應(Layout proximity effects)源自於元件尺寸比例及佈線製程 ... 在LOD模型之後,一些新的模型正在開發以更全面及正確的計算出佈線鄰近效應。...
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日期:2025-05-05
2008年9月7日 - 在Introduction to LOD Effect (上)一文中,已經簡單的介紹LOD (Length of Diffusion) Effect,接著來談談如何降低LOD Effect對電路的影響。...
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日期:2025-05-09
2009年4月16日 - Sources of layout proximity effect. • Well proximity effect. • Unintentional stressors. ▫ Shallow trench isolation (LOD effect). • Intentional stressors....
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日期:2025-05-05
Abstract—Length of thin oxide definition area (LOD) effects and the ... In the non-SiGe devices, the LOD effect is dominated by the STI stress and shows....
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日期:2025-05-09
➢LOD effect is due to mechanical compressive stress induced at boundary of. OD. ➢Proportional to the distance to OD boundary. ➢Layout dependent but not ......
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日期:2025-05-04
STI EFFECT OR LOD EFFECT. SHALLOW TRENCH ISOLATION OR LENGTH OF DIFFUSION. WPE. WELL PROXIMITY EFFECTS. OPC. OPTICAL PROXIMITY ......