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Charge-Trapping (CT) Flash and 3D NAND Flash
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日期：2026-04-23
24 Retention of BE-SONOS NAND Retention is excellent and no single tail bit found. The best reported CT reliability so far. No so called charge lateral migration issue (with our optimized SiN trapping layer and process integration) 75nm BE-SONOS (Non-cut ...看更多
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