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Si, SiGe, Ge, and III-V Semiconductor Nanomembranes and Nanowires Enabled by SiGe Epitaxy
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日期：2025-07-13
used as a sacrificial layer for lateral etching. In this approach, high selectivity between SiGe and Si is crucial. The selective etching between SiGe and Si is described in more detail in section 4. Very thin films of monocrystalline semiconductors have ...看更多
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