Surface Preparation and Deposited Gate Oxides for Gallium Nitride Based Metal Oxide Semiconductor De

Surface Preparation and Deposited Gate Oxides for Gallium Nitride Based Metal Oxide Semiconductor De

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日期:2025-05-27
Materials 2012, 5, 1297-1335; doi:10.3390/ma5071297 materials ISSN 1996-1944 www.mdpi.com/journal/materials Review Surface Preparation and Deposited Gate Oxides for Gallium Nitride Based Metal Oxide Semiconductor Devices Rathnait D. Long * and Paul C ......看更多