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  Fermi-level depinning at metal/GaN interface by an insulating barrier
  
  Highlights • Fermi level pinning phenomenon is dominant at metal/GaN interface. • Proposed and demonstrated a methodology for Fermi level depinning • Barrier height engineering when used in conjunction with Gd • Fermi level depinning using insulating barr
  
  2026-04-22
  
  瀏覽：505
- www.sciencedirect.com
  
  Depinning of the Fermi level at the Ge Schottky interface through Se treatment
  
  Depinning of the Fermi level at Al/Ge junctions was achieved through Se treatment. Al contacts to n- and p-type Ge with Se treatment exhibited ohmic and Schottk ... Figure 1 shows the I–V characteristics of Al contacts to n- and p-type Ge with and without
  
  2026-04-20
  
  瀏覽：704

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Fermi level depinning by a C-containing layer in a metal/Ge structure by using a chemical bath--《半導體

日期：2026-04-22

高級搜索：用" Schottky barrier Fermi level pinning " 到知網平台檢索，點擊這裡搜索更多... 《半導體學報》 2012年10期加入收藏投稿 Fermi level depinning by a C-containing layer in a metal/Ge structure by using a chemical ......

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Fermi-level depinning for low-barrier Schottky source/drain transistors - ResearchGate

日期：2026-04-23

Publication » Fermi-level depinning for low-barrier Schottky source/drain transistors. ... [Show abstract] [Hide abstract] ABSTRACT: Metal contact to SiC is not easy to modulate since the contact can be influenced by the metal, the termination of the SiC,...

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IEEE Xplore Abstract - Fermi level depinning at metal-organic semiconductor interface for low-resist

日期：2026-04-22

This paper presents the direct evidence and successful demonstration of Fermi-level depinning at metal-organic semiconductor (M/O) interfaces by inserting an ultrathin interfacial Si 3 N 4 insulator in between. The contact behavior is tuned from rectifyin...

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Method for depinning the Fermi level of a semiconductor at an electrical junction and devices incorp

日期：2026-04-20

FIELD OF THE INVENTION The invention relates generally to semiconductor processing and semiconductor devices. More particularly, the invention relates to a process for depinning the Fermi level of a semiconductor at a metal-interface layer-semiconductor ....

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Fermi Level Depinning Failure for Al/GeO2/Ge Contacts

日期：2026-04-21

Skip to main page content HOME CURRENT ISSUE FOCUS ISSUES ARCHIVE COLLECTIONS SUBSCRIBE HELP FEEDBACK Search for Keyword: GO Advanced Search User Name Password Sign In Fermi Level Depinning Failure for Al/GeO 2 /Ge Contacts...

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Fermi level depinning by a C-containing layer in a metal/Ge structure by using a chemical bath - Abs

日期：2026-04-21

Fermi level depinning by a C-containing layer in a metal/Ge structure by using a chemical bath Wang Wei (王巍), Wang Jing (王敬), Zhao Mei (赵梅), Liang Renrong (梁仁荣) and Xu Jun (许军) Show affiliations Tag this article Full text PDF (2.38 MB) ......

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Fermi level depinning at the germanium Schottky interface through sulfur passivation

日期：2026-04-21

We demonstrate the depinning of Fermi level on both p- and n-type germanium after sulfur passivation by aqueous ( NH 4 ) 2 S treatment. Schottky contacts realized using metals with a wide range of work functions produce nearly ideal behavior confirming th...

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Fermi-level depinning for low-barrier Schottky source/drain transistors

日期：2026-04-23

Fermi-level depinning for low-barrier Schottky source/drain transistors Rent: Rent this article for USD Buy: USD28.00 10.1063/1.2159096 Daniel Connelly 1,a), Carl Faulkner 1, P. A. Clifton 1 and D. E. Grupp 1 Scitation Author Page PubMed Google Scholar 1 ...

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