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  Fermi-level depinning for low-barrier Schottky source/drain transistors
  
  4 Jan 2006 ... By imposing an ultrathin insulator between low-work function metals and silicon, the Schottky barrier of the junction can be substantially ...
  
  2026-04-24
  
  瀏覽：1263
- scitation.aip.org
  
  Fermi level depinning in metal/Ge Schottky junction for ... - Scitation
  
  The SiN interfacial layer suppressed strong Fermi level pinning in metal/Ge ... Ge was obtained as a result of Fermi level depinning, and almost ideal Schottky ...
  
  2026-04-17
  
  瀏覽：872

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Fermi level depinning at the germanium Schottky interface through ...

日期：2026-04-17

We demonstrate the depinning of Fermi level on both p- and n-type germanium after sulfur passivation by aqueous ( NH 4 ) 2 S treatment. Schottky contacts ......

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Fermi Level Depinning For the Design of III-V FET ... - IEEE Xplore

日期：2026-04-24

Fermi Level Depinning For the Design of III-V FET Source/Drain Contacts. Jenny Hu, Ximeng Guan, Donghun Choi, James S. Harris, Krishna Saraswat, and H....

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IEEE Xplore Abstract - Fermi-level depinning in metal/Ge Schottky ...

日期：2026-04-18

We successfully demonstrated Schottky barrier height modulation in metal/Ge Schottky junction by inserting an ultrathin interfacial SiN layer. The SiN layer ......

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Fermi-level depinning at metal/GaN interface by an insulating barrier

日期：2026-04-22

We have particularly demonstrated the Fermi level depinning for ferromagnetic Schottky contact Fe and shown its usefulness for electrical spin injection and ......

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Fermi-level depinning for low-barrier Schottky source/drain ...

日期：2026-04-22

ABSTRACT By imposing an ultrathin insulator between low-work function metals and silicon, the Schottky barrier of the junction can be substantially reduced, ......

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Fermi level depinning in metal/Ge Schottky junction ... - ResearchGate

日期：2026-04-19

Publication » Fermi level depinning in metal/Ge Schottky junction for metal source/drain Ge metal-oxide-semiconductor field-effect-transistor application....

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Fermi level depinning by a C-containing layer in a metal/Ge ...

日期：2026-04-24

Fermi level depinning by a C-containing layer in a metal/Ge structure by using a chemical bath. Wang Wei(王巍), Wang Jing(王敬)О, Zhao Mei(赵梅), Liang ......

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15.3 Fermi Level Depinning at Metal-Organic Semiconductor ...

日期：2026-04-17

Fermi Level Depinning at Metal-Organic Semiconductor Interface for. Low- Resistance Ohmic Contacts. Zihong Liu,1* Masaharu Kobayashi,1 Bipul C. Paul, 1, ......

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