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日期:2025-06-08
that the Fermi level at the poly-Si interface is pinned above the middle of the poly- Si bandgap....
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日期:2025-06-07
B93501044, B93505007 電機四. 半導體專題實驗. Fermi-Level Pinning &. Schottky Barrier Height. 1. 2....
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Fermi-level pinning of poly-Si and metal-silicide gate materials on Hf-based gate dielectrics has been ......
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日期:2025-06-03
“Fermi-level pinning”. Surface states act as donors or acceptors. The density of surface states can be ......
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IEEE TRANSACTIONS ON ELECTRON DEVICES, VOL. 51, NO. 6, JUNE 2004. 971. Fermi-Level ......
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日期:2025-06-07
The concept of Fermi level pinning at semiconductor/liquid junctions. Consequences for energy ......
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日期:2025-06-02
2008年2月9日 - 關於Fermi-level pinning. 改善金屬閘極的功函數控制. 下一世代的金氧半場效電晶體(MOSFET) ......