search:nand flash word line相關網頁資料

- en.wikipedia.org
  
  Flash memory - Wikipedia, the free encyclopedia
  
  The NAND type is primarily used in main memory, memory cards, USB flash drives, solid-state drives, and similar products, for general storage and transfer of ...
  
  2024-04-27
  
  瀏覽：1419
- www.sumobrain.com
  
  NAND FLASH WORD LINE MANAGEMENT - SANDISK TECHNOLOGIES INC.
  
  Methods for improving NAND flash memory yields by identifying memory blocks with benign word line defects are described. Memory blocks including word line defects may be classified as incomplete memory blocks and may be used for storing data fragments. A
  
  2024-04-30
  
  瀏覽：949

nand flash word line的相關文章

nand flash word line的相關公司資訊

nand flash word line的相關商品

Extended Word-Line NAND Flash Memory - Upload, Share, and Discover Content on SlideShare

日期：2024-04-29

Transcript 1. Japanese Journal of Applied Physics 48 (2009) 081203 REGULAR PAPER Extended Word-Line NAND Flash Memory Jang-Gn YunÃ, Il Han Park, Wandong Kim, Jong Duk Lee ......

全文

[轉載]Nand flash結構以及讀寫經典分析 @ 隨手筆記 :: 隨意窩 Xuite日誌

日期：2024-04-27

NAND Flash 的數據是以bit 的方式保存在memory cell，一般來說，一個cell 中只能存儲一個bit。這些cell 以8 個或者16 個為單位，連成bit line，形成所謂的byte(x8)/word(x16)，這就是NAND Device 的位寬。這些Line 會再組成Page.(Nand Flash 有多種結構，我使用的 ......

全文

Layout For Nand Flash Memory Array Having Reduced Word Line Impedance

日期：2024-04-26

Title: Layout for nand flash memory array having reduced word line impedance. Abstract: A memory array including a first region in which a first memory sub-array is located and a second region separated from the first region in which a second memory sub-a...

全文

Layout for NAND flash memory array having reduced word line impedance - Micron Technology, Inc.

日期：2024-04-28

Layout for NAND flash memory array having reduced word line impedance United States Patent 7248499 Abstract: A memory array including a first region in which a first memory sub-array is located and a second region separated from the first region in which ...

全文

Programming Method To Reduce Word Line To Word Line Breakdown For Nand Flash

日期：2024-04-25

Thank you for viewing the Programming method to reduce word line to word line breakdown for nand flash patent info. - - - Apple patents, Boeing patents, Google patents, IBM patents, Jabil patents, Coca Cola patents, Motorola patents Results in 0.37377 , A...

全文

List of new Nand Flash patents & technologies

日期：2024-04-30

Nand flash word line management Methods for improving nand flash memory yields by identifying memory blocks with benign word line defects are described. Memory blocks including word line defects may be classified as incomplete memory blocks and may ......

全文

Extended Word-Line NAND Flash Memory

日期：2024-04-30

Extended Word-Line NAND Flash Memory,10.1143/JJAP.48.081203,Japanese Journal of Applied Physics,Jang-Gn Yun,Il Han Park,Wandong Kim,Jong Duk Lee,Byung Edit Extended Word-Line NAND Flash Memory (Citations: 1) BibTex | RIS | A NAND flash ......

全文

A Word Line Ramping Technique to Suppress the Program Disturbance of NAND Flash Memory

日期：2024-04-30

JOURNAL OF SEMICONDUCTOR TECHNOLOGY AND SCIENCE, VOL.1, NO. 2, JUNE, 2001 125 A Word Line Ramping Technique to Suppress the Program Disturbance of NAND Flash Memory Jin-Wook Lee, Yeong-Taek Lee, Taehee Cho, Seungjae Lee, Dong ......

全文

12 > »