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日期:2025-05-30
dopant diffusion in silicon, the properties of intrinsic point defects like vacancies (
V) and self-interstitials (I), and the ......
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日期:2025-06-01
•Dopant interactions with Point Defects of Si substrate. - Dopant ... Dopant
Diffusivity affected by Point Defect Concentration. - Point Defect ..... + is diffusivity
D+ for undoped silicon because p = n....
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Point defects and dopant diffusion in silicon. P. M. Fahey,. " P. B.Griffin, and J.D.
Plummer. Integrated Circuits Laboratory ......
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(7) The role of primary point defects in the degradation of silicon detectors due to
hadron and lepton irradiation - Lazanu ......
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日期:2025-05-31
Point defects and dopant diffusion in silicon. P. M. Fahey,* P. B. Griffin, and J. D.
Plummer. Integrated Circuits ......
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日期:2025-05-27
for point defect and dopant diffusion simultaneously) and because heuristic sim-
plifications to the "full" model ......
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日期:2025-05-29
Phosphorus and Boron Diffusion in Silicon Under Equilibrium Conditions. Appl.
Phys. Lett. ..... The individual dopant-point defect complexes diffuse with a
diffusivity DAI or DAV, which is related to the ......
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日期:2025-05-27
3.1.3 Intrinsic Dopant Diffusion. If impurities are introduced into the silicon lattice,
the gradient of the local concentration ......