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www.appliedmaterials.comA doping process that deposits a conformal layer of material containing the desired dopant species and then uses a thermal process to drive the dopants to a controlled depth in the underlying circuit structures. CPD provides a means to dope complex, 3D st瀏覽：829 -
![Crystallographic defect - Wikipedia, the free encyclopedia]()
en.wikipedia.orgCrystalline solids exhibit a periodic crystal structure. The positions of atoms or molecules occur on repeating fixed distances, determined by the unit cell parameters. However, the arrangement of atoms or molecules in most crystalline materials is not pe瀏覽：1463
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日期：2025-05-27
3.1.4 Extrinsic Dopant Diffusion Up: 3.1 Diffusion in Silicon Previous: 3.1.2 Sources and Sinks 3.1.3 Intrinsic Dopant Diffusion If impurities are introduced into the silicon lattice, the gradient of the local concentration causes a diffusion process. The...
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日期：2025-05-30
3.1.1 Intrinsic Point Defects Up: 3 The Diffusion Process Previous: 3 The Diffusion Process 3.1 Diffusion in Silicon Diffusion in silicon is directly associated with native point-defects and impurity-related defects. Impurity related defects arise from th...
DIFFUSION OF ION IMPLANTED BORON IN SILICON: THE EFFECTS OF LATTICE DEFECTS AND CO-IMPLANTED IMPURIT
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日期：2025-05-28
CHAPTER 1 INTRODUCTION Motivation Since its discovery as a uniform and controllable mechanism to introduce dopant into semiconductors, ion implantation has grown to be the principal doping technology used in the manufacturing of integrated circuits (ICs)....
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日期：2025-05-28
184 Point Defects, Charge, and Diffusion Some special rules for ceramics: The number of sites is constant. This is the same as in metals, but we often have very different sites available...
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日期：2025-05-26
Enter the annealing temperature: [ C] (900 to 1350) Enter the annealing time: [min] (1 to 600) Enter the substrate depth: [µm] (0 to 10) the impurity concentration at the specified substrate depth [cm-3]...
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3 Fick’s first law diffusion equation • Macroscopic dopant redistribution is described by Fick’s first law (does not consider the details of the point defects reactions) , which describes how the flux (or flow) of dopant depends on the doping gradient. • ...
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Active Si layer - silicon layer on top of the buried oxide (BOX) in SOI substrates. learn more. Adhesion - ability of materials to stick (adhere) to each other. Adhesion promoter - material used to improve adhesion of materials, typically photoresist to t...
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日期：2025-05-26
20 Nuclear stopping is a process that creates Frenkel pair defects. A Frenkel pair describes a pair of point defects created when a Si atom is displaced into an interstitial position and the vacancy it left behind. Collisions are elastic and require a con...
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