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METHOD FOR MANUFACTURING A DUAL WORK FUNCTION SEMICONDUCTOR DEVICE AND THE SEMICONDUCTOR DEVICE MADE
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日期:2026-04-22
Patent application title: METHOD FOR MANUFACTURING A DUAL WORK FUNCTION SEMICONDUCTOR DEVICE AND THE SEMICONDUCTOR DEVICE MADE THEREOF Inventors: Joshua Tseng (Trevuren, BE) Yasutoshi Okuno (Osaka, JP) Lars-Ake ......
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日期:2026-04-24
CMOS semiconductor devices having dual work function metal gate structures that are formed using fabrication techniques that enable independent work function control for PMOS and NMOS device and which significantly reduce or otherwise eliminate impact on ...
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日期:2026-04-17
Slide # 1 Ohmic contacts • Common techniques to make ohmic contacts – Choose metal so that its work function Fmetal is close to that of semiconductors Fsemi (thermal ionic) – Insert thin layer of narrow bandgap material between metal and semiconductor...
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日期:2026-04-20
While the work function of a semiconductor can be changed by doping, the electron affinity ideally does ......
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日期:2026-04-21
Semiconductor Devices for Integrated Circuits (C. Hu) ... increases with increasing metal work function....
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日期:2026-04-18
The schematic below shows a metal and an n-type semiconductor. The work functions of the metal and ......
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日期:2026-04-19
If we have an n-type semiconductor of work function Φn and metal of work function Φm, such that Φm ......
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日期:2026-04-22
work function, energy needed to move electron in the solid atom from the Fermi level to vacuum level, ......


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