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Ballistic carbon nanotube field-effect transistors
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日期：2026-04-25
(peak conductance ,4e2/h) (Fig. 1c inset). This corresponds to ballistic transport in the p-channel of semiconducting SWNTs. The metallic behaviour of the ON states of semiconducting SWNTs and G ON approaching 4e 2/h strongly suggest nearly SB-free contac...看更多
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