PECVD Silicon Dioxide - MIT - Massachusetts Institute of Technology

PECVD Silicon Dioxide - MIT - Massachusetts Institute of Technology

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日期:2025-05-03
Property Value Reference Image/URL (optional) Mass density 2.3 (g/cm^3) Film Characteristics of Low-Temperature PECVD SiO2 using tetraisocyanatesilane and O2; Idris et al; Japanese Journal of Applied Physics http://jjap.ipap.jp/… …link?JJAP/37/6562...看更多