Sidewall Passivation During Silicon Gate Etch (2)

Sidewall Passivation During Silicon Gate Etch (2)

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日期:2026-04-24
Sidewall Passivation During Silicon Gate Etch During silicon gate etching, anisotropy control is obtained by the formation of a passivation layer which forms on the gate sidewall and protects it from spontaneous etching reactions. The sidewall film thickn...看更多