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Sidewall Passivation During Silicon Gate Etch (2)
瀏覽:1080
日期:2026-04-21
Sidewall Passivation During Silicon Gate Etch During silicon gate etching, anisotropy control is obtained by the formation of a passivation layer which forms on the gate sidewall and protects it from spontaneous etching reactions. The sidewall film thickn...看更多















