TECHNICAL INFORMATION SD-28 Characteristics and use of Si APD Avalanche Photodiode

TECHNICAL INFORMATION SD-28 Characteristics and use of Si APD Avalanche Photodiode

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日期:2025-07-02
7 Characteristics and use of Si APD (Avalanche Photodiode) lanche region repeatedly collide with the crystal lattice, so a longer time is required to move a unit distance than that re-quired to move in areas outside the avalanche region. This means that e...看更多