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The mechanism for polarity inversion of GaN via a thin AlN layer: Direct experimental evidence
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日期：2025-12-04
The mechanism for polarity inversion of GaN via a thin AlN layer: Direct experimental evidence Fude Liu,a Ramon Collazo, Seiji Mita, Zlatko Sitar, and Gerd Duscherb Department of Materials Science and Engineering, North Carolina State University, Raleigh,...看更多
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