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日期:2025-05-07
This thesis presents an investigation into arcing and parasitic plasmas in .... (PECVD) is the fabrication of thin-film transistor (TFT) displays and pho- tovoltaic ......
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日期:2025-05-07
2004年11月18日 - Microarcing at the chamber wall in RF plasma is studied in PECVD type ... The arcing frequency strongly depends on the plasma potential, the....
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日期:2025-05-07
The PECVD deposition begins with a stabilization step, where the process ..... A more severe arcing problem will exhibit itself as much larger drops in all five ......
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日期:2025-05-02
Tool and recipe. Layers on chamber wall, tool aging, arcing, particle. Dimensions (reactor), gas flow rates, pumping speed ... Gas flow rates and pumping speed....
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日期:2025-05-08
This system and procedure allows us to create reproducibly microarcings by increasing the plasma potential. The wall arcing threshold of the plasma potential in ......
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日期:2025-05-07
PECVD Reactors. - Tube or 'runnel reacTors. — Induc'rive or ... Thermionic Arc: The enhanced emission is due To. exTernal heaTing and is less abrupT and ......
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日期:2025-05-03
PECVD Plasma Arcing 會導致沉積之薄膜產生厚度不均勻之結果,因為厚度均勻性太差,導致生產線上之晶片報廢,降低晶圓廠生產良率,也增加設備復機成本。...
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日期:2025-05-04
PECVD Plasma Arcing 會導致沉積之薄膜產生厚度不均勻之結果,因為厚度均勻性太差,導致生產線上之晶片報廢,降低晶圓廠生產良率,也增加設備復機成本。...