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- www.corial.net
  
  Corial - The Etch and Deposition Company
  
  Corial is a process company that designs and manufactures plasma etching and deposition equipments with innovative solutions dedicated to the semiconductor compounds, optoelectronics, MEMS, industries and research applications. ... Welcome to CORIAL ...
  
  2025-04-26
  
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- www.plasmatherm.com
  
  Stress Control of Si-based PECVD Dielectrics Final
  
  The Si-based dielectric films, silicon dioxide (SiO2) and silicon nitride. (SiNx) prepared ... In some of these applications, there are requirements for PECVD SiO2.
  
  2025-04-29
  
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Structural properties of SiO2 films prepared by plasma ...

日期：2025-04-29

and structural properties of SiO2 thin films prepared by. PECVD from SiH4 and N2O precursors. We have mainly investigated the influence of the N2O/SiH4 flow....

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What is the proper recipe for depositing SiO2 film using ...

日期：2025-04-28

2014年11月19日 - I think, 250°C is the lowest possible process temperature for PECVD ... I ask because Au and PECVD SiO2 should work quite well and your ......

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PECVD oxide SiO2 - Crystec Technology Trading GmbH

日期：2025-04-29

Formation of silicon oxide layers SiO2. In semiconductor technology, silicon oxide layers are mainly used as dielectrics or latterly also for MEMS (micro electro ......

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PECVD Grown SiO2 Film Process Optimization - IEEE Xplore

日期：2025-04-30

PECVD Grown SiO2 Film Process Optimization. Song Ping, Lian Jie, Gao Shang, Li Ping, Wang Xiao, Wu Shiliang, Ma Zheng. (Shandong University Shandong ......

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Analysis of SiO2 Thin Films Deposited by PECVD Using an ...

日期：2025-05-02

Brazilian Journal of Physics, vol. 31, no. 2, June, 2001. 299. Analysis of SiO2 Thin Films Deposited by PECVD. Using an Oxygen-TEOS-Argon Mixture. Carlos E....

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Characteristic of SiO2 Films Deposited by Using Low ...

日期：2025-04-27

chemical vapor deposition (PECVD) driven by an inductively coupled plasma (ICP) for ... We found that the SiO2 deposited using by PECVD with TEOS/N2/O2....

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